Robert Maier: Publikationen


Z. Li, R. Maier, M.-M. Bakran, D. Domes, F.-J. Niedernostheide:
How to Turn off SiC MOSFET with Low Losses and Low EMI Across the Full Operating Range.
PCIM Europe digital days 2021, ISBN 978-3-8007-5515-8, pp. 1263-1270, VDE VERLAG GMBH, Berlin, Offenbach (2021)
P. Hofstetter, R. Maier, M.-M. Bakran:
Influence of the Threshold Voltage Hysteresis and the Drain Induced Barrier Lowering on the Dynamic Transfer Characteristic of SiC Power MOSFETs.
APEC 2019, Anaheim, USA (2019)
R. Maier, M.-M. Bakran:
Filterless Mitigation of Machine Terminal Reflected Wave Voltage Stress.
IEMDC 2019, San Diego, USA (2019)
R. Maier, M.-M. Bakran:
Optimal Hard Switching as Benchmark for SiC MOSFET Switching Losses with limited du/dt and blocking voltage.
21th European Conference on Power Electronics and Applications, Genua (2019)
R. Maier, M.-M. Bakran:
SiC MOSFET Switching Process Under the Influence of Shielded Motor Cables.
PCIM Europe 2019, Nürnberg (2019)
R. Maier, M.-M. Bakran:
Switching SiC MOSFETs under conditions of a high power module.
EPE 2018: 20th European Conference on Power Electronics and Applications, Riga (Lettland), September (2018)
M. Gleißner, R. Maier, M.-M. Bakran:
Comparison of fault-tolerant multilevel inverters.
European Conference on Power Electronics and Applications, European Power Electronics and Drives Association et al. 2017 – 2017 19th European Conference, DOI: 10.23919/EPE17ECCEEurope.2017.8099102, Warschau (Polen), November (2017)